The Light Conversion HARPIA-TG Transient Grating Spectrometer measures carrier diffusion and lifetime. Measurements are based on the laser-induced transient grating (LITG) technique. This method enables simultaneous observation of non-equilibrium carrier recombination and diffusion by all‑optical means
HARPIA-TG allows the characterization of electrically non‑conductive or non-fluorescent samples. It is suitable for semiconductors materials and derivatives, e.g., silicon carbide (SiC), gallium nitride (GaN), perovskites, organic and inorganic solar cells, quantum dots, and even complex nanostructures such as quantum wells.
Coupled with CARBIDE or PHAROS laser with integrated optical parametric amplifier (I-OPA), the compact system is fully automated and computer-controlled via advanced measurement and analysis software. Thus, the user only needs to put the sample in the holder and start the measurement to obtain the diffusion coefficient in a matter of minutes
SPECIFICATIONS
| Model | HARPIA-TG |
| Grating recording wavelength | 340 – 560 nm |
| Probe wavelength | 1030 nm |
| Grating period | 1.15 – 15 μm |
| Pulse duration | < 290 fs |
| Delay range | Up to 8 ns |
| MEASUREMENT RANGES | |
|---|---|
| Diffusion coefficient | 0.1 – 50 cm2/s |
| Carrier lifetime | 1 ps – 80 ns |
| DIMENSIONS | |
| Physical dimensions (L × W × H) | 730 × 420 × 188 mm |
Carrier diffusion measurement
Carrier lifetime measurement
Carrier diffusion length measurement
Single-wavelength absorption
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Photonic Solutions Ltd
Unit 2.2 Quantum Court
Heriot-Watt University Research Park
Edinburgh
EH14 4AP
