The Hamamatsu C12741-03-02 InGaAs camera delivers high sensitivity in the near-infrared (950–1700 nm) range. It uses a 640 × 512 InGaAs sensor with 20 µm pixels for sharp NIR imaging.
You gain 60 frames per second capture via USB 3.0 (Gen 1) and 14-bit output for rich image detail. It cools to +10 °C using a Peltier device with forced-air cooling. Exposure times range from 16.7 ms to 1 s, giving flexibility across imaging conditions.
The camera supports edge, level, and start triggering, with SMA connector and 0–1 s delay in 10 µs steps. It also offers background subtraction and shading correction, all in a compact, easy-to-integrate C-mount module.
Supply the C12741-03-02 InGaAs Camera with DC +12 V, consuming approx. 16 W. It operates in 0 – +40 °C (ambient) and stores between –10 °C to +50 °C.
Use it confidently for silicon wafer inspection, beam profiling, solar-cell evaluation, moisture detection, or cultural heritage imaging — all with reliability and precision in the SWIR band.
